NTB52N10
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 52A 178W 100V 0.03Ohm
PDF
/
Buying Options
Total Price: USD $1.39
Unit Price: USD $1.39175
≥1 USD $1.39175
≥10 USD $1.1419
≥100 USD $1.1058
≥500 USD $1.07065
≥1000 USD $1.03455
Inventory: 1125
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 178W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 800 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 156A
Drain-source On Resistance-Max 0.03Ohm
Drain Current-Max (Abs) (ID) 52A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn80Pb20)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
JESD-609 Code e0
Physical
Transistor Element Material SILICON
Number of Terminals 2
Surface Mount YES
Supply Chain
Factory Lead Time [object Object]
Recommended For You
NTB52N10+price,NTB52N10+datasheet,NTB52N10+in stock,buy+NTB52N10,finder+NTB52N10,NTB52N10+tutorials,NTB52N10+download