Avalanche Energy Rating (Eas) 240 mJ
Pulsed Drain Current-Max (IDM) 150A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.028Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 28m Ω @ 22.5A, 5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 125W Tj
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ