NTB35N15G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 37A D2PAK
PDF
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Buying Options
Total Price: USD $2.38
Unit Price: USD $2.3845
≥1 USD $2.3845
≥10 USD $1.957
≥100 USD $1.8962
≥500 USD $1.83445
≥1000 USD $1.77365
Inventory: 54861
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 37A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2W Ta 178W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 178W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Ta
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 125ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 111A
Avalanche Energy Rating (Eas) 700 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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