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NTB30N06T4G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 27A D2PAK
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 101 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.042Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 24 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 36ns
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 42m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 88.2W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 88.2W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 27A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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