NTB25P06G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 27.5A D2PAK
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.966968
≥1 USD $0.966968
≥10 USD $0.912238
≥100 USD $0.8606
≥500 USD $0.811886
≥1000 USD $0.76593
Inventory: 1173
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 27.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 120W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27.5A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 72ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 190 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 27.5A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.082Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 600 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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