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NTB18N06LT4

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 15A D2PAK
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Buying Options
Total Price: USD $16.8
Unit Price: USD $16.79885
≥1 USD $16.79885
≥10 USD $13.78355
≥100 USD $13.3532
≥500 USD $12.92285
≥1000 USD $12.49155
Inventory: 1184
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Reach Compliance Code not_compliant
Current Rating 15A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 48.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 121ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.1Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 61 mJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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