Avalanche Energy Rating (Eas) 61 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.1Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 7.5A, 5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 48.4W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ