NSTR4501NT1G
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 3.2A Ta 3.2A 1.25W 3ns
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.08Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.2A
Turn-Off Delay Time 12 ns
Fall Time (Typ) 3 ns
Drain to Source Voltage (Vdss) 20V
Rise Time 12ns
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 3.6A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 6.5 ns
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Reference Standard AEC-Q101
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Max Power Dissipation 1.25W
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tape & Reel (TR)
Physical
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
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