Pulsed Drain Current-Max (IDM) 25A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.2A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 7.2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature FAST SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~150°C TJ