Moisture Sensitivity Level (MSL) 1
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Power Dissipation-Max 300mW
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 280mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 1.2Ohm
Feedback Cap-Max (Crss) 5 pF