Avalanche Energy Rating (Eas) 550 mJ
Pulsed Drain Current-Max (IDM) 225A
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~175°C TJ