Avalanche Energy Rating (Eas) 420 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 44A
Drain-source On Resistance-Max 0.52Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 520m Ω @ 4.5A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 39W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ