NDF06N60ZH
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 7.1A TO220FP
PDF
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Buying Options
Total Price: USD $8.56
Unit Price: USD $8.5557
≥1 USD $8.5557
≥10 USD $7.0205
≥100 USD $6.80105
≥500 USD $6.5816
≥1000 USD $6.36215
Inventory: 1263
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1107pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 600V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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