NDD02N60Z-1G
RoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 2.2A Tc 2.2A 57W 7ns
PDF
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Buying Options
Total Price: USD $0.34
Unit Price: USD $0.34105
≥1 USD $0.34105
≥10 USD $0.2793
≥100 USD $0.27075
≥500 USD $0.2622
≥1000 USD $0.25365
Inventory: 205198
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 2.38mm
Length 6.73mm
Height 7.62mm
Technical
Pulsed Drain Current-Max (IDM) 9A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.2A
Turn-Off Delay Time 15 ns
Fall Time (Typ) 7 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 7ns
Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 274pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1A, 10V
FET Type N-Channel
Turn On Delay Time 9 ns
Case Connection DRAIN
Power Dissipation 57W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 57W Tc
Number of Elements 1
JESD-30 Code R-PSIP-T3
Pin Count 4
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Tin (Sn)
Resistance 4.8Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Surface Mount NO
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 28 Weeks
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