Pulsed Drain Current-Max (IDM) 6.9A
Drain to Source Breakdown Voltage 400V
Drain-source On Resistance-Max 0.0055Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.7A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 5.5 Ω @ 220mA, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 39W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Operating Temperature -55°C~150°C TJ