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NDBA180N10BT4H

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 180A Ta 180A 200W Tc 130ns
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Buying Options
Total Price: USD $2.64
Unit Price: USD $2.6353
≥1 USD $2.6353
≥10 USD $2.1622
≥100 USD $2.09475
≥500 USD $2.0273
≥1000 USD $1.95985
Inventory: 1189
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 451 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 600A
Drain Current-Max (Abs) (ID) 100A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 185 ns
Fall Time (Typ) 130 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V 15V
Drain to Source Voltage (Vdss) 100V
Rise Time 320ns
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Ta
Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 50V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 50A, 15V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 95 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 200W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Terminal Finish Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2016
Packaging Tape & Reel (TR)
Operating Temperature 175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 4 Weeks

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