Avalanche Energy Rating (Eas) 451 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 600A
Drain Current-Max (Abs) (ID) 100A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 185 ns
Drive Voltage (Max Rds On,Min Rds On) 10V 15V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Ta
Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 50V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 50A, 15V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 200W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 175°C TJ