Pulsed Drain Current-Max (IDM) 90A
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) -30A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 19A, 10V
Transistor Application SWITCHING
Turn On Delay Time 12.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 75W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~175°C TJ