Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.05Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 13A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 68W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~175°C TJ