Avalanche Energy Rating (Eas) 110 mJ
DS Breakdown Voltage-Min 52V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.95Ohm
Continuous Drain Current (ID) 2.6A
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Drain to Source Voltage (Vdss) 59V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
Vgs(th) (Max) @ Id 1.9V @ 100μA
Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.69W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ