Avalanche Energy Rating (Eas) 110 mJ
DS Breakdown Voltage-Min 52V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.11Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 2.6A
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Drain to Source Voltage (Vdss) 59V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 1.9V @ 100μA
Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.69W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ