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MVSF2N02ELT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 20V 2.8A Automotive 3-Pin SOT-23 T/R
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Buying Options
Total Price: USD $0.73
Unit Price: USD $0.7304
≥1 USD $0.7304
≥10 USD $0.6336
≥100 USD $0.438768
≥500 USD $0.366608
≥1000 USD $0.312004
Inventory: 1199
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 5V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V
Rise Time 95 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 5A
DS Breakdown Voltage-Min 20V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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