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MTW32N20E

ON Semiconductor
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 32A TO-247
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 32A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 91 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 32A
JEDEC-95 Code TO-247AE
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 128A
Avalanche Energy Rating (Eas) 810 mJ

Dimensions

Height 20.3mm
Length 15.9mm
Width 5.3mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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