MTP2955V
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 12A TO-220AB
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 1148
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating -12A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 100 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.23Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 42A
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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