Avalanche Energy Rating (Eas) 180 mJ
Pulsed Drain Current-Max (IDM) 18A
Drain-source On Resistance-Max 0.66Ohm
Drain Current-Max (Abs) (ID) 6A
Continuous Drain Current (ID) 6A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 660m Ω @ 3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.75W Ta 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ