Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 150V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 200 ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 300m Ω @ 3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Technology MOSFET (Metal Oxide)
Max Power Dissipation 1.25W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)