Drain to Source Breakdown Voltage 60V
Drain Current-Max (Abs) (ID) 0.3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 300mA
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.7 Ω @ 1A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 800mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~150°C TJ