Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 10V
Rds On (Max) @ Id, Vgs 34m Ω @ 3A, 4.5V
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ