MCH6321-TL-W
RoHS
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Package 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount P-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 4A Ta 4A 1.5W Ta 39ns
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Buying Options
Total Price: USD $0.18
Unit Price: USD $0.184221
≥1 USD $0.184221
≥10 USD $0.173795
≥100 USD $0.163962
≥500 USD $0.154677
≥1000 USD $0.145922
Inventory: 1118
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status LIFETIME (Last Updated: 5 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Weight 7.512624mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 8.1 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 83m Ω @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Rise Time 31ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.083Ohm
Drain to Source Breakdown Voltage -20V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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