DS Breakdown Voltage-Min 12V
Drain-source On Resistance-Max 0.069Ohm
Continuous Drain Current (ID) 3.5A
Drive Voltage (Max Rds On,Min Rds On) 0.9V 2.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 2.5V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 6V
Vgs(th) (Max) @ Id 800mV @ 1mA
Rds On (Max) @ Id, Vgs 69m Ω @ 1.5A, 2.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ