Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Rds On (Max) @ Id, Vgs 241m Ω @ 750mA, 4.5V
Turn On Delay Time 5.3 ns
Power Dissipation-Max 800mW Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ