IRLS510A
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 4.5A TO-220F
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 440mOhm @ 2.25A, 5V
FET Type N-Channel
Power Dissipation-Max 23W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2002
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Alternative Model
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