IRLM210ATF
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 770MA SOT-223
PDF
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 21741
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-4
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 390mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 770mA Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
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