IRL640A
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 18A TO-220
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Buying Options
Total Price: USD $1.43
Unit Price: USD $1.4256
≥1 USD $1.4256
≥10 USD $1.142944
≥100 USD $0.940456
≥500 USD $0.795731
≥1000 USD $0.675171
≥3000 USD $0.641414
Inventory: 80485
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.7mm
Length 10.67mm
Height 16.3mm
Technical
Nominal Vgs 2 V
Avalanche Energy Rating (Eas) 64 mJ
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 2V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 46 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1705pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 11 ns
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
Current Rating 18A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin (Sn)
Resistance 180mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Alternative Model
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