IRFS450B
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 9.6A TO-3PF
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 990 mJ
Pulsed Drain Current-Max (IDM) 38.4A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.39Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 9.6A
Turn-Off Delay Time 260 ns
Fall Time (Typ) 125 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 130ns
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 390m Ω @ 4.8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 45 ns
Case Connection ISOLATED
Power Dissipation 96W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 96W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.962g
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Alternative Model
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