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IRFM120ATF

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3496
≥1 USD $0.3496
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.2603
Inventory: 11251
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.7mm
Length 6.7mm
Height 1.7mm

Technical

Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 2.3A
Turn-Off Delay Time 36 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Case Connection DRAIN
Power Dissipation 2.4W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta
Number of Elements 1
JESD-30 Code R-PDSO-G4
Current Rating 2.3A
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Resistance 200MOhm
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 188mg
Number of Pins 3
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 10 Weeks

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