IRF840B
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 8A TO-220
PDF
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.266
≥1 USD $0.266
≥10 USD $0.2185
≥100 USD $0.21185
≥500 USD $0.2052
≥1000 USD $0.19855
Inventory: 17867
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 10.67mm
Technical
Nominal Vgs 4 V
Rds On Max 800 mΩ
Drain to Source Resistance 650mOhm
Input Capacitance 1.8nF
Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 125 ns
Fall Time (Typ) 75 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Rise Time 65ns
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
FET Type N-Channel
Power Dissipation 134W
Element Configuration Single
Power Dissipation-Max 134W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 800mOhm
Termination Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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