IRF634B-FP001
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 8.1A TO-220
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.378556
≥1 USD $0.378556
≥10 USD $0.357125
≥100 USD $0.336915
≥500 USD $0.317843
≥1000 USD $0.299856
Inventory: 1102
Minimum: 1
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Technical Details
Technical
Pulsed Drain Current-Max (IDM) 32.4A
Avalanche Energy Rating (Eas) 200 mJ
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 8.1A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 65 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 75ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 450m Ω @ 4.05A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 74W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 74W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Weight 1.8g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 weeks ago)
Alternative Model
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