IRF620B_FP001
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5A TO-220
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Inventory: 1987
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 800mOhm @ 2.5A, 10V
FET Type N-Channel
Power Dissipation-Max 47W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-220-3
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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