Pulsed Drain Current-Max (IDM) 56A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 0V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 55W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ