HUFA75329P3
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 49A TO-220AB
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Technical Details
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Rds On Max 24 mΩ
Drain to Source Resistance 24mOhm
Input Capacitance 1.06nF
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 49A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Rise Time 58ns
Gate Charge (Qg) (Max) @ Vgs 75nC @ 20V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 24mOhm @ 49A, 10V
FET Type N-Channel
Power Dissipation 128W
Element Configuration Single
Power Dissipation-Max 128W Tc
Current Rating 49A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series UltraFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220-3
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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