HUFA75307T3ST
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 2.6A SOT-223-4
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Total Price: USD $0.22
Unit Price: USD $0.22
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Inventory: 6829
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Technical Details
Technical
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Automotive, AEC-Q101, UltraFET?
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.09Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.6A
Turn-Off Delay Time 35 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 30 ns
Gate Charge (Qg) (Max) @ Vgs 17nC @ 20V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 5 ns
Case Connection DRAIN
Power Dissipation 1.1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.1W Ta
Number of Elements 1
Current Rating 2.6A
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Physical
Transistor Element Material SILICON
Weight 188mg
Number of Pins 4
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 3.7mm
Length 6.7mm
Height 1.8mm
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