Drain to Source Resistance 22mOhm
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 20V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 19mOhm @ 60A, 10V
Element Configuration Single
Power Dissipation-Max 145W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ