Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 26m Ω @ 15A, 10V
Element Configuration Single
Power Dissipation-Max 62W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ