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FQPF2N80YDTU

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack, Formed Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V TO-220-3
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Buying Options
Total Price: USD $1.97
Unit Price: USD $1.9712
≥1 USD $1.9712
≥10 USD $1.585056
≥100 USD $1.30416
≥500 USD $1.103555
≥1000 USD $0.936355
≥3000 USD $0.889539
Inventory: 2243
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Number of Pins 3
Weight 2.565g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V

Dimensions

Height 16.07mm
Length 10.36mm
Width 4.9mm

Compliance

RoHS Status ROHS3 Compliant

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