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FQPF20N06L

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 60V N-Channel QFET Logic Level
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Buying Options
Total Price: USD $3.09
Unit Price: USD $3.08845
≥1 USD $3.08845
≥10 USD $2.53365
≥100 USD $2.4548
≥500 USD $2.375
≥1000 USD $2.29615
Inventory: 4858
Minimum: 1
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Technical Details

Technical

FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 7.85A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Turn On Delay Time 10 ns
Case Connection ISOLATED
Power Dissipation 30W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 15.7A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series QFET?
Published 2001
Packaging Tube
Operating Temperature -55°C~175°C TJ
Pulsed Drain Current-Max (IDM) 62.8A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.07Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1V
Continuous Drain Current (ID) 15.7A
Turn-Off Delay Time 35 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 156 ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Current - Continuous Drain (Id) @ 25°C 15.7A Tc

Physical

Transistor Element Material SILICON
Weight 2.27g
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 8 Weeks

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Width 4.7mm
Length 10.16mm
Height 9.19mm

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