Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 7.85A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ
Pulsed Drain Current-Max (IDM) 62.8A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.07Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15.7A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Current - Continuous Drain (Id) @ 25°C 15.7A Tc