FQP4P25
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 250V 4A TO-220
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 2.1Ohm @ 2A, 10V
FET Type P-Channel
Power Dissipation-Max 75W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series QFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-220-3
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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