FQP2P40
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 400V 2A TO-220
PDF
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Buying Options
Total Price: USD $7.56
Unit Price: USD $7.56105
≥1 USD $7.56105
≥10 USD $6.2035
≥100 USD $6.0097
≥500 USD $5.8159
≥1000 USD $5.6221
Inventory: 1266
Minimum: 1
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Technical Details
Technical
Avalanche Energy Rating (Eas) 120 mJ
DS Breakdown Voltage-Min 400V
Pulsed Drain Current-Max (IDM) 8A
Drain Current-Max (Abs) (ID) 2A
JEDEC-95 Code TO-220AB
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 400V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 6.5 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 63W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series QFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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