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ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 250V P-Channel QFET
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Buying Options
Total Price: USD $16.11
Unit Price: USD $16.10915
≥1 USD $16.10915
≥10 USD $13.2183
≥100 USD $12.80505
≥500 USD $12.3918
≥1000 USD $11.97855
≥800 USD $10.73975
Inventory: 1118
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -9.4A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.13W Ta 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 150 ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.62Ohm
Drain to Source Breakdown Voltage -250V
Avalanche Energy Rating (Eas) 650 mJ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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