Avalanche Energy Rating (Eas) 560 mJ
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) -27A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 70m Ω @ 13.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.75W Ta 120W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ