Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.085Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 38.4A
Turn-Off Delay Time 170 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Current - Continuous Drain (Id) @ 25°C 38.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 85m Ω @ 19.2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 290W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ